MIL-PRF-19500-616 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode Or Anode Center Tap, Ultrafast, Types 1N6657 Through 1N6659 And 1N6657R Through 1N6659R, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/616G

* TABLE III. Groups B, C, and E delta measurements. 1/ 2/ 3/ 4/ 5/

Unit

Step

Inspection

MIL-STD-750

Symbol

Limits

Method

Conditions

Min

Max

0.1 V (pk) from previous

VF1

Forward voltage change

4011

IFM = 10A, pulsed (see

measured value

4.5.1)

IR1

2 A dc or 100 percent

Reverse current change

4016

VR = 80 percent of VRWM

from initial value,

(see 1.3)

whichever is greater.

1/ The electrical measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 4, see table III herein, steps 1 and 2.

b. Subgroup 5, see table III herein, steps 1 and 2.

2/ The electrical measurements for table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are as follows:

a. Subgroup 3, see table III herein, steps 1 and 2.

b. Subgroup 6, see table III herein, steps 1 and 2.

3/ The electrical measurements for table E-VII (all quality levels) of MIL-PRF-19500 are as follows: Subgroup 6,

see table III herein, steps 1 and 2.

4/ The electrical measurements for table E-IX (all quality levels) of MIL-PRF-19500 are as follows: Subgroup 1,

see table III herein, steps 1 and 2.

5/ Devices which fail the limits of table I herein shall not be acceptable.