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MIL-PRF-19500-620 Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, Schottky Barrier, Types 1N5822, 1N5822Us, 1N6864, 1N6864Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance for die \(element evaluation\).

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MIL-PRF-19500/620J
TABLE I. Group A inspection.
MIL-STD-750
Limits
Symbol
Unit
Inspection 1/
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
°C/W
ZθJX
Thermal impedance
3101
See 4.3.3
2.5
Forward voltage
4011
IFM = 1.0 A (pk) pulse method
VFM1
1N5822, 1N5822US
0.40
V
(see 4.5.1)
1N6864, 1N6864US
0.50
V
1N5822, 1N5822US
4011
IFM = 3.0 A (pk) pulse method
VFM2
0.50
V
1N6864, 1N6864US
0.70
V
(see 4.5.1)
1N5822, 1N5822US
4011
IFM = 9.4 A (pk) pulse method
VFM3
0.70
V
(see 4.5.1)
Reverse current leakage
4016
IRM1
VRM = 40 V (pk) pulse method
1N5822, 1N5822US
0.10
mA
1N6864, 1N6864US
0.15
mA
VRM = 80 V (pk) pulse method
(see 4.5.1)
Subgroup 3
TA = +100°C
High temperature operation:
Reverse current leakage
4016
IRM2
1N5822, 1N5822US
VRM = 40 V (pk) pulse method
12.5
mA
1N6864, 1N6864US
18.0
mA
VRM = 80 V (pk) pulse method
(see 4.5.1)
Forward voltage
4011
IF = 3.0 A (pk) pulse method
VFM4
1N5822, 1N5822US
0.47
V
(see 4.5.1)
1N6864, 1N6864US
0.65
V
TA = -55°C
Low temperature
operation:
Reverse current leakage
4016
IRM3
1N5822, 1N5822US
VRM = 40 V (pk) pulse method
0.40
mA
1N6864, 1N6864US
0.55
mA
VRM = 80 V (pk) pulse method
(see 4.5.1)
Forward voltage
4011
IF = 3.0 A (pk) pulse method
VFM5
1N5822, 1N5822US
0.62
V
(see 4.5.1)
1N6864, 1N6864US
0.80
V
Subgroup 4, 5, 6, and 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
10



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