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MIL-PRF-19500-620 Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, Schottky Barrier, Types 1N5822, 1N5822Us, 1N6864, 1N6864Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance for die \(element evaluation\).

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MIL-PRF-19500/620J
* TABLE II. Group E inspection (all quality levels) for qualification and requalification.
MIL-STD-750
Sampling
Inspection
plan
Method
Conditions
*
n = 45,
Subgroup 1
c=0
-65°C to 150°C, 500 cycles
Temperature cycling
1051
Hermetic seal
1071
Test condition E
Electrical measurement
See table I, subgroup 2
Subgroup 2
Intermittent Operating Life
1036
10,000 cycles
n = 22,
c=0
Electrical measurement
See table I, subgroup 2
Subgroup 4
Thermal impedance curves
See MIL-PRF-19500
Subgroup 5
Not applicable
Subgroup 6
*
ESD
1020
Subgroup 8
n = 45
Resistance to glass cracking
1057
Test to destruction or 25 cycles max, whichever comes
first.
11



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