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MIL-PRF-19500-620 Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, Schottky Barrier, Types 1N5822, 1N5822Us, 1N6864, 1N6864Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance for die \(element evaluation\).

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MIL-PRF-19500/620J
Dimensions
Symbol
Inches
Millimeters
Min
Max
Min
Max
A
.062
.064
1.57
1.63
B
.052
.054
1.32
1.37
Design data
Metallization:
Top: (Anode)
Al
Back: (Cathode)
Au
Al thickness
25,000 Å minimum.
Gold thickness
4,000 Å minimum.
.010 inch (0.254 mm) ± .002 (±.051 mm).
Chip thickness
FIGURE 3. JANC (A-version) die dimensions.
5



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