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MIL-PRF-19500-620 Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, Schottky Barrier, Types 1N5822, 1N5822Us, 1N6864, 1N6864Us, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance for die \(element evaluation\).

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MIL-PRF-19500/620J
TEMPERATURE-CURRENT DERATING CURVE
Temper1N58re-CuEND-Ct DMratiTEDCurves
atu 22US rren AP eOUNng
1N5822 MELF Endcap Mounted
3.5
===================
Legend
(Top to Bottom)
3
===================
Vr=10V
Vr=20V
2.5
Vr=30V
Vr=40V
2
1.5
1
0.5
0
25
50
75
100
125
150
175
Sinewave Operation 50% Duty Cycle
TECc °(C) ) End Cap)p)
Te ( ēC ( (End Ca
Sinewave Operation 50% Duty Cycle
Thermal Resistance Junction to End Cap = 10.0ēC/W
RθJEC = 10.0°C/W
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating ≤ TJ
specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum TJ allowed.
2. This temperature-current derating curve varies with applied voltage.
FIGURE 5. Temperature current derating for 1N5822US.
13



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