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MIL-PRF-19500-118 Semiconductor Device, Diode, Silicon, Types 1N483B, 1N485B, 1N486B, 1N5194, 1N5194Ur, 1N5194Us, 1N5195, 1N5195Ur, 1N5195Us, 1N5196, 1N5196Ur, And 1N5196Us, Jan, Jantx, And JantxvThis specification covers the performance requirements for silicon diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/118L
MIL-STD-750
Limits
Symbol
Unit
Inspection 1/ 2/
Method
Conditions
Min
Max
Subgroup 6
Condition A, IO = 200 mA dc,
Surge current
4066
*
10 surges at one per minute;
tp =1/120 s, IFSM = 2 A (pk).
Electrical measurements
See table I, subgroup 2
1/ For sampling plan, see MIL-PRF-19500.
2/ Electrical characteristics for all surface mount versions are identical to the corresponding axial leaded versions
unless otherwise specified.
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