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MIL-PRF-19500-118 Semiconductor Device, Diode, Silicon, Types 1N483B, 1N485B, 1N486B, 1N5194, 1N5194Ur, 1N5194Us, 1N5195, 1N5195Ur, 1N5195Us, 1N5196, 1N5196Ur, And 1N5196Us, Jan, Jantx, And JantxvThis specification covers the performance requirements for silicon diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/118L
TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
Qualification
MIL-STD-750
inspection
Inspection
Method
Conditions
Subgroup 1
n = 45, c = 0
100 cycles 0C to +100C
Thermal shock (glass
1056
strain)
500 cycles, -65C to +175C
Temperature cycling
1051
Hermetic seal
1071
Gross leak.
Electrical measurement
See table I, subgroup 2
Subgroup 2
Intermittent operating life
1037
10,000 cycles; IF = 200 mA (DC or average rectified
current), ton = toff = 1 minute.
Electrical measurements
See table I, subgroup 2
Subgroup 4
Thermal impedance curves
See MIL-PRF-19500, table E-IX, group E, subgroup 4.
Subgroup 5
Not applicable
Subgroup 9
1057
Test condition B. Test until failure occurs or to a
n = 45
Resistance to glass
maximum of 25 cycles, whichever comes first
cracking
Subgroup 10
Monitored mission
1055
n = 22, c = 0
temperature cycling
Electrical measurements
See table I, subgroup 2
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