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MIL-PRF-19500-124 Semiconductor Device, Diode, Silicon, Voltage Regulator Types 1N2970B Through 1N2977B, 1N2979B, 1N2980B, 1N2982B, 1N2984B Through 1N2986B, 1N2988B Through 1N2993B, 1N2995B, 1N2997B, 1N2999B Through 1N3005B, 1N3007B, 1N3008B, 1N3009B, 1N3011B, 1N3012B, 1N3014B, 1N3015B, Plus Rb Types, 1N3993A Through 1N3998A, And Ra Types, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for 10 watt, silicon voltage regulator diodes: A and B type \(standard polarity\); RA and RB type \(reverse polarity\). Four levels of product assurance are provided for each device type as specified in MIL–PRF–19500.

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MIL­PRF­19500/124L
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
C
.250
6.35
5
CD
.255
.424
6.48
10.77
6
CH
.300
.405
7.62
10.29
C1
.012
.065
0.30
1.65
5
HF
.424
.437  10.77
11.1
6
HT1
.075
.175
1.91
4.45
7
HT2
.060
.175
1.52
4.45
7
OAH
.600
.800  15.24  20.32
SD
SL
.422
.453
10.72
11.51
SU
.078
1.98
8
UD
.163
.189
4.14
4.80
ΦT
.060
.095
1.52
2.41
NOTES:
1.  Dimensions are in inches. Millimeters are given for general information only.
2.  See 3.4.2 for the polarity of the terminals.
3.  Threads shall be 10­32 UNF­2A in accordance with FED­STD­H28. Maximum pitch diameter (SD) of
plated threads shall be basic pitch diameter .1697 inch (4.31 mm).
4.  Device shall not be damaged by a torque of 15 inch­pounds applied to a 10­32 UNF­2B nut assembled on
thread.
5.  The angular orientation and peripheral configuration of terminal 1 is undefined, however, the major
surfaces over dimension C and C1 shall be flat.
6.  Dimension CD can not exceed dimension HF.
7.  A chamfer or undercut on one or both ends of the hex portion is optional; minimum base diameter at
seating plane .403 inch (10.24 mm).
8.  Length of incomplete or undercut threads UD.
9.  In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 1. Physical dimensions (DO­4).
3



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