MIL-PRF-19500-124 Semiconductor Device, Diode, Silicon, Voltage Regulator Types 1N2970B Through 1N2977B, 1N2979B, 1N2980B, 1N2982B, 1N2984B Through 1N2986B, 1N2988B Through 1N2993B, 1N2995B, 1N2997B, 1N2999B Through 1N3005B, 1N3007B, 1N3008B, 1N3009B, 1N3011B, 1N3012B, 1N3014B, 1N3015B, Plus Rb Types, 1N3993A Through 1N3998A, And Ra Types, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for 10 watt, silicon voltage regulator diodes: A and B type \(standard polarity\); RA and RB type \(reverse polarity\). Four levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16

MIL�PRF�19500/124L

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E�VII of MIL�PRF�19500 and as follows. Electrical measurements (end-points) and delta

requirements shall be in accordance with the applicable steps of table II herein.

Subgroup

Method

Condition

Tension: Test condition A; 20 pounds; t = 15 �3 s.

2036

Torque (terminal): Test condition D1; 10 inch-ounces; t = 15 �3 s.

2036

Torque (stud): Test condition D2; 15 inch-pounds; t = 30 �3 s.

2036

Bending stress: Test condition F; 3 pounds; t = 15 �3 s, method B.

2036

1027

IZ = column 15 of table III herein, adjust TA, mounting, or both, to achieve

TC = 150�C �5�C.

1037

6,000 cycles. See 4.5.6 herein (separate samples may be used).

4071

22 devices, c = 0, JAN, JANTX, and JANTXV levels only. Temperature coefficient of

breakdown voltage (see 4.5.3 and 4.5.4). IZ = column 5 of table III herein,

TA = +25�C; T2 = T1 + 100�C; each sublot; α Vz = percent/�C column14 of table III

herein. Voltage regulation (see 4.5.2) each sublot. Vz(reg) = V dc, column 9 of

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:

4.5.1 Surge current IZSM. The currents specified in column 10 of table III herein shall be applied in the reverse

direction and shall be superimposed on the current (IZ = column 5 of table III herein) a total of five surges at 1-minute

intervals. Each individual surge shall be a one-half square wave pulse of 1/120-second duration or an equivalent

one-half sine wave with the same effective (rms) current.

4.5.2 Voltage regulation VZ(reg). A current at 10 percent of IZ (column 8 of table III herein) shall be maintained

until thermal equilibrium is obtained, and the VZ shall then be increased to a level of 50 percent of IZ (column 8 of

table III herein) and maintained at this level for a period of time until thermal equilibrium is obtained at which time the

voltage change shall not exceed column 9 of table III herein. During this test, the temperature shall be equal to

TA = +25�C.

4.5.3 Regulator voltage. The IZ test current (column 5 of table III herein) shall be applied until thermal equilibrium

is obtained prior to reading the regulator voltage. During this test, the temperature shall be equal to TA = +25�C

4.5.4 Temperature coefficient of regulator voltage (αVZ). The device shall be temperature stabilized with current

applied prior to reading regulator voltage at the specified case temperatures.

4.5.5 Inspection condition. Unless otherwise specified in MIL�PRF�19500 or herein, all inspections shall be made

at temperature shall be equal to TA = +25�C.