MIL-PRF-19500-124 Semiconductor Device, Diode, Silicon, Voltage Regulator Types 1N2970B Through 1N2977B, 1N2979B, 1N2980B, 1N2982B, 1N2984B Through 1N2986B, 1N2988B Through 1N2993B, 1N2995B, 1N2997B, 1N2999B Through 1N3005B, 1N3007B, 1N3008B, 1N3009B, 1N3011B, 1N3012B, 1N3014B, 1N3015B, Plus Rb Types, 1N3993A Through 1N3998A, And Ra Types, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for 10 watt, silicon voltage regulator diodes: A and B type \(standard polarity\); RA and RB type \(reverse polarity\). Four levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/124L

3.5 Marking. Devices shall be marked as specified in MIL�PRF�19500.

3.6 Reverse polarity. Reverse polarity units (see 3.4.2.a and 3.4.2.b) shall be marked with an "R" preceding the

"A" or "B" in the type designation, as applicable.

3.7 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

Qualification inspection (see 4.2).

Screening (see 4.3).

Conformance inspection (see 4.4 and tables I and II).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL�PRF�19500.

4.3 Screening (JANS, JANTXV, AND JANTX levels only). Screening shall be in accordance with table E�IV of

MIL�PRF�19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Measurement

Screening

(see table E-IV of

JANS level

JANTXV and JANTX level

IR1 and VZ (for devices with VZ(nom) ≥ 10 V

Not applicable

dc; see column 2 of table III herein)

IR1 and VZ; ĆIR1 = 100 percent of initial value

or 1 percent of column 12 of table III herein,

whichever is greater, ĆVZ = �2.5 percent of

IR1 and VZ

initial value (for devices with VZ(nom) ≥ 10 V

dc, see column 2 of table III herein)

See 4.3.1

Subgroup 2 of table I herein; ĆIR1 = 100

Subgroups 2, 3, and 4 of table I herein;

ĆIR1 = 100 percent of initial value or 1 percent

percent of initial value or 1 percent of

of column 12 of table III herein, whichever is

column 12 of table III herein, whichever is

greater; ĆVZ = �2.5 percent of initial value

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = 165�C minimum with IZ not to

exceed IZ in column 15 of table III herein; VZ = column 2 of table III herein.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL�PRF�19500.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E�IV of

MIL�PRF�19500 and table I herein. End-point electrical measurements shall be in accordance with the applicable

steps of table II herein.