MIL-PRF-19500-124 Semiconductor Device, Diode, Silicon, Voltage Regulator Types 1N2970B Through 1N2977B, 1N2979B, 1N2980B, 1N2982B, 1N2984B Through 1N2986B, 1N2988B Through 1N2993B, 1N2995B, 1N2997B, 1N2999B Through 1N3005B, 1N3007B, 1N3008B, 1N3009B, 1N3011B, 1N3012B, 1N3014B, 1N3015B, Plus Rb Types, 1N3993A Through 1N3998A, And Ra Types, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for 10 watt, silicon voltage regulator diodes: A and B type \(standard polarity\); RA and RB type \(reverse polarity\). Four levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/124L

TABLE I. Group A inspection � Continued.

MIL-STD-750

Limit 2/

Inspection 1/

Unit

Symbol

Method

Conditions

Min

Max

Subgroups 5

Not applicable

Subgroup 6

TC = +25�C;

Surge current

4066

IZSM = column 10 of table III

End-point electrical

See table II, steps 1, 3, and 4

measurements

Subgroup 7

JANS level only

Voltage regulation

VZ(reg)

Column 9

V dc

αVZ

%/�C

Temperature coefficient

IZ = column 5 of table III;

Column 14

of breakdown voltage

TA = +25�C; T2 = T1 +100�C

For sampling plan, see MIL�PRF�19500.

Column references are to table III herein.