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MIL-PRF-19500-253 Semiconductor Device, Transistor, Npn, Silicon, Low-Power, Types 2N930 And 2N930Ub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for an NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device. RHA level designators "M", "D", "P", "L" "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/253L
*  4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include
the group D tests specified in table II herein. These tests shall be performed as required in accordance with
MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for
neutron fluence as applicable (see 6.2.e herein), except group D, subgroup 2 may be performed separate from other
subgroups. Group D inspection may also be performed ahead of the screening lot using die selected in accordance
with MIL-PRF-19500 and related documents. Alternate package options may also be substituted for the testing
provided there is no adverse effect to the fluence profile.
*  4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurement shall be performed in accordance with method 3131
of MIL-STD-750 using the guidelines in that method for determining IM, IH, and tH. Measurement delay time
tMD = 70 µs maximum.
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