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MIL-PRF-19500-253 Semiconductor Device, Transistor, Npn, Silicon, Low-Power, Types 2N930 And 2N930Ub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for an NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device. RHA level designators "M", "D", "P", "L" "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/253L
B-version
Die size:
.018 x .018 inch (0.4572 x 0.4572 mm).
.008 ±.0016 inch (0.2032 ±0.04064 mm).
Die thickness:
Base pad:
.0025 inch (0.0635 mm) diameter.
Emitter pad:
.003 inch (0.0762 mm) diameter.
Gold, 6,500 ±1,950 Å.
Back metal:
Aluminum, 19,500 ±2,500 Å.
Top metal:
Back side:
Collector.
SiO2, 7,500 ±1,500 Å.
Glassivation:
FIGURE 4. Physical dimensions, JANHCB and JANKCB die.
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