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MIL-PRF-19500-253 Semiconductor Device, Transistor, Npn, Silicon, Low-Power, Types 2N930 And 2N930Ub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for an NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device. RHA level designators "M", "D", "P", "L" "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/253L
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 2 - continued.
Collector to base cutoff current
3036
Bias condition D;
10
nA dc
ICBO2
VCB = 45 V dc
VCE = 5 V dc; IC = 10 µA dc;
Forward-current transfer ratio
3076
100
300
hFE1
Pulsed (see 4.5.1)
VCE = 5 V dc; IC = 500 µA dc;
Forward-current transfer ratio
3076
150
hFE2
Pulsed (see 4.5.1)
Forward-current transfer ratio
3076
600
VCE = 5 V dc; IC = 10 mA dc
hFE3
Collector-emitter saturation
3071
1.0
V dc
IC = 10 mA dc; IB = 0.5 mA dc;
VCE(sat)
voltage
pulsed (see 4.5.1)
Base-emitter saturation
3066
0.6
1.0
V dc
Test condition A; IC = 10 mA dc;
VBE(sat)
voltage
IB = 0.5 mA dc; pulsed (see 4.5.1)
Subgroup 3
TA = +150°C
High temperature operation
µA dc
Collector to base cutoff current
3036
10
Bias condition C;VCE = 45 V dc;
ICES2
pulsed (see 4.5.1)
TA = -55°C
Low temperature operation
VCE = 5 V dc; IC = 10 µA dc
Forward-current transfer ratio
3076
20
hFE4
Subgroup 4
Small-signal short-circuit
3206
150
600
VCE = 5 V dc; IC = 1 mA dc;
hfe
forward current transfer ratio
f = 1 kHz
VCE = 5 V dc; IC = 500 µA dc;
Magnitude of small-signal
3306
1.5
6.0
| hfe |
short- circuit forward current
f = 30 MHz
transfer ratio
Open circuit output
3236
8
pF
VCB = 5 V dc; IE = 0;
Cobo
capacitance
100 kHz ≤ f ≤ 1 MHz
See footnotes at end of table.
14



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