MIL-PRF-19500-253 Semiconductor Device, Transistor, Npn, Silicon, Low-Power, Types 2N930 And 2N930Ub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for an NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device. RHA level designators "M", "D", "P", "L" "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/253L

C- version

NOTES:

.015 x .019 inch �.001 inch. (0.381 X 0.483 �0.0254 mm)

1. Chip size

.010 �.0015 inch. (0.254 �0.038 mm).

2. Chip thickness

3. Top metal

Aluminum 10,000� minimum, 12,000� nominal.

4. Back metal

A. Gold 3,500� minimum, 5,000� nominal.

5. Backside

Collector.

6. Bonding pad

B = .003 inch (0.076 mm), E = .004 inch (0.101 mm) diameter.

SiO2 (Silicon Oxide) 6,300 � min, 9,000 � nom.

7. Passivation

FIGURE 5. Physical dimensions, JANKCC die.