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MIL-PRF-19500-355 Semiconductor Device, Unitized Dual Transistor, Npn, Silicon, Types 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, And 2N2920U, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for two electrically isolated, matched NPN silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/355R
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 2 - Continued
Forward-current transfer ratio
3076
VCE = 5 V dc; IC = 1 mA dc;
hFE3
2N2919, 2N2919L, 2N2919U
150
600
2N2920, 2N2920L, 2N2020U
300
1,000
Base-emitter saturation
3066
Test condition A;
IC = 1.0 mA dc; IB = 100 µA dc;
voltage
0.5
1.0
V dc
VBE(sat)1
IC = 1.0 mA dc; IB = 100 µA dc;
Collector-emitter saturation
3071
voltage
0.3
V dc
VCE(sat)1
VCE = 5 V dc, IC = 100 µA dc
Forward-current
3076
hFE 2 -1
*
transfer ratio (gain ratio)
0.9
1.1
(see 4.5.4)
hFE 2 - 2
Absolute value of
3066
Test condition B; VCE = 5 V dc,
base-emitter-voltage
5
mV dc
IC = 10 µA dc (see 4.5.5)
|VBE1 - VBE2 |1
differential
Absolute value of
3066
Test condition B; VCE = 5 V dc,
base-emitter-voltage
3
mV dc
IC = 100 µA dc (see 4.5.5)
|VBE1 - VBE2 |2
differential
Absolute value of
3066
Test condition B; VCE = 5 V dc,
|VBE1 - VBE2 |3
base-emitter-voltage
5
mV dc
IC = 1 mA dc (see 4.5.5)
differential
Subgroup 3
TA = +150°C
High temperature operation
|ĆVBE1 -VBE2 ĆTA |1
Base-emitter-voltage
3066
0.8
mV dc
*
Test condition B; VCE = 5 V dc,
(nonsaturated) (absolute
IC = 100 µA dc
value of differential change
TA = +125°C and +25°C
with temperature) 6/
(see 4.5.6)
Collector to base cutoff
3036
Bias condition D; VCB = 45 V dc
µA dc
current
2.5
ICBO3
TA = -55°C
Low temperature operation
VCE = 5 V dc; IC = 10 µA dc
Forward-current transfer
3076
hFE4
ratio
2N2919, 2N2919L, 2N2919U
20
2N2920, 2N2920L, 2N2920U
50
|ĆVBE1 -VBE2 ĆTA |2
Base-emitter-voltage
3066
1
mV dc
Test condition B; VCE = 5 V dc,
*
(nonsaturated) (absolute
IC = 100 µA dc
value of differential change
TA = +25°C and -55°C
with temperature) 6/
(see 4.5.6)
See footnotes at end of table.
14



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