MIL-PRF-19500-355 Semiconductor Device, Unitized Dual Transistor, Npn, Silicon, Types 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, And 2N2920U, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for two electrically isolated, matched NPN silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/355R

4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table E-IV

Measurement

of MIL-PRF-19500)

JANS level

JANTX and JANTXV levels

(1) 3c

Thermal response, method 3131 of

MIL-STD-750

hFE 2-1

ICBO2, hFE3,

Not applicable

hFE 2-2

48 hours minimum

hFE 2-1

ICBO2, hFE3,

hFE 2-2

ĆICBO2 = 100 percent of initial value

or 1 nA dc, whichever is greater.

ĆhFE3 = �20 percent

See 4.3.1

Subgroup 2 of table I herein; ĆICBO2 = 100

Subgroups 2 and 3 of table I herein;

ĆICBO2 = 100 percent of initial value

percent of initial value or 1 nA dc, whichever is

greater; ĆhFE3 = �25 percent

or 1 nA dc, whichever is greater;

ĆhFE3 = �25 percent

(1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in

screening requirements for JANTX and JANTXV levels..

4.3.1 Power burn-in conditions. VCB = 10 - 30 V dc. Power shall be applied to achieve TJ =135�C minimum and

using a minimum PD = 75 percent of PT maximum rated as defined in 1.3. With approval of the qualifying activity and

preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for

JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the

manufacturing site's burn-in data and performance history will be essential criteria for burn-in modification approval.

4.3.2 Thermal response. For very small junction devices such as this, the term "thermal response" shall be used

in lieu of "thermal impedance" although measurements shall be performed the same manner as thermal impedance in

accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW (VC

and VH where appropriate). Measurement delay time (tMD) = 70 �s max. See table II, group E, subgroup 4 and

figures 5 and 6 herein.

4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.