MIL-PRF-19500-355 Semiconductor Device, Unitized Dual Transistor, Npn, Silicon, Types 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, And 2N2920U, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for two electrically isolated, matched NPN silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/355R

NOTES:

.015 x .019 inch �.001 inch (0.381 x 0.4826 mm �0.0254 mm).

1. Chip size.................................................

.010 �.0015 inch (0.254 �0.0381 mm).

2. Chip thickness ........................................

3. Top metal ...............................................

Aluminum 15,000� minimum, 18,000� nominal.

4. Back metal..............................................

A. Gold 2,500� minimum, 3,000� nominal.

B. Eutectic Mount - No Gold.

5. Backside................................................. Collector.

6. Bonding pad ........................................... B = .003 inch (0.0762 mm), E = .004 inch (0.1016 mm) diameter.

7. Passivation ............................................. Si3N4 (Silicon Nitride) 2 k� min, 2.2 k� nom.

FIGURE 3. Physical dimensions (JANHCA and JANKCA die).