MIL-PRF-19500-355 Semiconductor Device, Unitized Dual Transistor, Npn, Silicon, Types 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, And 2N2920U, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for two electrically isolated, matched NPN silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/355R

NOTES:

1. Die size---------

.018 x .018 inch (0.457 mm x 0.457 mm).

2. Die thickness---

.008 �.0016 inch (0.203 mm �0.04 mm).

3. Base pad--------

.0025 inch diameter (0.06 mm).

4. Emitter pad-----

.003 inch diameter (0.076 mm).

5. Back metal-----

Gold, 6,500 �1,950�.

6. Top metal------

Aluminum, 19,500 �2,500�.

7. Back side------

Collector.

SiO2, 7,500 �1,500�.

8. Glassivation---

FIGURE 4. Physical dimensions (JANHCB and JANKCB) B version die.