MIL-PRF-19500-355 Semiconductor Device, Unitized Dual Transistor, Npn, Silicon, Types 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, And 2N2920U, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for two electrically isolated, matched NPN silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/355R

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows:

hFE-1/hFE-2............................................. Static forward-current-gain-ratio. The matching ratio of the static forward-

current transfer ratio of each section.

RθJA ..................................................... Thermal resistance junction to ambient.

RθJSP(IS) ................................................ Thermal resistance junction to solder pads (infinite sink mount to PCB).

|VBE1 - VBE2 | ........................................ Absolute value of base-emitter-voltage differential between the individual

sections.

|ĆVBE1-2 (T1) - ĆVBE1-2 (T2)| ................ Absolute value of the algebraic difference between the base-emitter-

voltage differentials between the individual sections at two different

temperatures.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figures 1, 2, 3, and 4. No lead (Pb) shall be used in the construction of the die bonds.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and

test levels shall be as defined in MIL-PRF-19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, 1.5, and table I.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.

3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P,

L, R, F, G, or H shall immediately precede (or replace) the device "2N" identifier (depending upon degree of

abbreviation required).

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I, II, and III).