INCHPOUND
MILPRF19500/370H
The documentation and process conversion measures
19 February 2013
necessary to comply with this document shall be
SUPERSEDING
completed by 19 August 2012.
MILPRF19500/370G
14 August 2008
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,
TYPE 2N3442, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MILPRF19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistor. Three
levels of product assurance are provided for each device type as specified in MILPRF19500.
1.2 Physical dimensions. The device package style is TO204AA (formerly TO3) in accordance with figure 1.
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
Type
PT (1)
PT (2)
RθJC
VCBO
VCEO
VEBO
VCER
IB
IC
TJ and TSTG
TA = +25°C
TC = +25°C
(3)
°C/W
°C
W
W
V dc
V dc
V dc
V dc
A dc
A dc
2N3442
6.0
117
1.5
160
140
7
150
7
10
65 to +200
(1) Derate linearly 34.2 mW/°C above TA = +25°C.
(2) See figure 2 for temperature-power derating curves.
(3) See figure 3 for transient thermal impedance graph.
1.4 Primary electrical characteristics. Unless otherwise specified, TC =+25°C.
hFE1 (1)
VCE(sat) (1)
hfe
Limits
VCE = 4 V dc
IC = 3 A dc
VCE = 4 V dc
IC = 3 A dc
IB = 300 mA dc
IC = 3 A dc, f = 100 kHz
V dc
Min
20
1.0
Max
70
1.0
(1) Pulsed (see 4.5.1).
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to Semiconductor@dla.mil. Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.dla.mil.
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