MIL-PRF-19500-370 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Type 2N3442, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, high-power transistor. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL�PRF�19500/370H

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

�

Test Methods for Semiconductor Devices.

from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111�5094.)

2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL�PRF�19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as

3.4 Interface and physical dimensions. The interface requirements and physical dimensions shall be as specified

in MIL�PRF�19500 and on figure 1 (TO�204AA, formerly TO�3) herein.

3.4.1 Lead finish. Unless otherwise specified, the lead finish shall be solderable in accordance with

MIL�STD�750, MIL�PRF�19500, and herein. Where a choice of lead finish is desired, it shall be specified in the

acquisition document (see 6.2).

3.4.2 Polarity. The identification of terminals of the device package shall be as shown on figure 1. Terminal 1

shall be connected to the emitter, terminal 2 shall be connected to the base, and the collector shall be electrically

connected to the case.

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I.

3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I.