MILPRF19500/370H
3.7 Marking. Marking shall be in accordance with MILPRF19500.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3).
c.
4.2 Qualification inspection. Qualification inspection shall be in accordance with MILPRF19500 and as specified
herein.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.3 Screening (quality levels JANTX and JANTXV only). Screening shall be in accordance with table EIV of
MILPRF19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see table EIV
of MILPRF19500)
JANTX and JANTXV levels only
3c (1)
Thermal impedance (transient), see 4.3.1.
hFE1, ICEX
11
12
See 4.3.2.
13
See table I, subgroup 2 herein.
ĆICEX = 100 percent or 2 µA dc whichever is greater;
ĆhFE1 = 25 percent of initial value.
(1) Thermal impedance shall be performed anytime after temperature cycling (screen 3a) and
does not need to be repeated in screening requirements.
4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with test
method 3131 of MILSTD750 using the guidelines in that test method for determining IH, IM, tH, tSW (and VH where
appropriate). Measurement delay time (tMD) = 70 µs maximum. The thermal impedance limit used in screen 3c and
table I, subgroup 2 herein shall be set statistically by the supplier. See table II, subgroup 4 (group E) herein.
4.3.2 Power burn-in conditions. The power burn-in conditions shall be as follows: TJ = +187.5°C ±12.5°C;
VCB = 10 to 30 V dc; TA ≤ +35°C. With approval of the qualifying activity and preparing activity, alternate burn-in
criteria (hours, bias conditions, TJ, and mounting conditions) may be used. A justification demonstrating equivalence
is required. In addition, the manufacturing site's burn-in data and performance history will be essential criteria for
burn-in modification approval.
5
For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business