An Integrated Publishing, Inc. Site

An Integrated Publishing Website

MIL-PRF-19500-370 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Type 2N3442, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, high-power transistor. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL�PRF�19500/370H

TABLE I. Group A inspection.

MIL�STD�750

Limit

Inspection 1/

Unit

Symbol

Max

Min

Method

Conditions

Subgroup 1

Visual and mechanical

2071

examination

Subgroup 2

�C/W

Thermal impedance

See 4.3.1

3131

ZθJC

Bias condition D;

V(BR)CEO

Breakdown voltage,

3011

140

V dc

IC = 3 A dc, pulsed (see 4.5.1),

collector to emitter

see figure 4

3011

Bias condition B;

V(BR)CER

150

V dc

Breakdown voltage,

IC = 1.5 A dc, RBE = 100 Ω,

collector to emitter

see figure 4

3011

Bias condition A;

V(BR)CEX

160

V dc

Breakdown voltage,

IC = 1.5 A dc, VEB = 1.5 V dc,

collector to emitter

see figure 4

Collector to emitter

3041

Bias condition A;

ICEX

0.01

mA dc

cutoff current

VCE = 125 V dc,

VEB = 1.5 V dc

Collector to base

3036

Bias condition D;

ICBO1

0.1

mA dc

cutoff current

VCB = 140 V dc

Emitter to base cutoff current

3061

Condition D;

IEBO

mA dc

VEB = 7 V dc

Base emitter voltage

3066

Test condition B;

VBE

1.7

V dc

(nonsaturated)

pulsed (see 4.5.1),

IC = 3 A dc, VCE = 4.0 V dc

Saturation voltage

3071

Pulsed (see 4.5.1),

VCE(sat)

1.0

V dc

and resistance

IC = 3 A dc, IB = 300 mA dc

Forward-current transfer ratio

3076

VCE = 4 V dc, IC = 3 A dc,

hFE1

pulsed (see 4.5.1)

See footnote at end of table.