MIL-PRF-19500-370 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Type 2N3442, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, high-power transistor. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL�PRF�19500/370H

TABLE II. Group E inspection (all quality levels) � for qualification and re-qualification only.

Qualification

Inspection

sample plan

Method

Conditions

45 devices

Subgroup 1

c=0

Temperature cycling

1051

Test condition G, 500 cycles.

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 and 4.6 herein.

45 devices

Subgroup 2

c=0

Test temperature = +125�C; VCB = 80 percent of rated

Blocking life

1048

voltage; t = 1,000 hours.

Electrical measurements

See table I, subgroup 2 and 4.6 herein.

Sample size

Subgroup 4

N/A

Thermal impedance curves

45 devices

Subgroup 8

c=0

Reverse voltage leakage

1033

Condition B for devices < 400 V.

stability