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MIL-PRF-19500-370 Semiconductor Device, Transistor, Npn, Silicon, High-Power, Type 2N3442, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, high-power transistor. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL­PRF­19500/370H
TABLE I. Group A inspection ­ Continued.
Limit
Inspection 1/
Unit
Symbol
Max
Min
Method
Conditions
Subgroup 3
TA = +150°C
High temperature operation:
3036
Bias condition D;
ICBO2
1.0
mA dc
Collector to base
VCB = 140 V dc
cutoff current
TA = -55°C
Low temperature operation
3076
VCE = 4 V dc, IC = 3 A dc,
hFE2
15
Forward-current
pulsed (see 4.5.1)
transfer ratio
Subgroup 4
Small-signal, short circuit
3306
VCE = 4 V dc, IC = 3 A dc,
hfe
1
forward-current
f = 100 kHz
transfer ratio
Subgroup 5
TC = +25°C; t = 1 s,
Safe operating area
3051
(continuous dc)
Test 1
VCE = 11.7 V dc,
IC = 10 A dc
Test 2
VCE = 78 V dc,
IC = 1.5 A dc
Test 3
VCE = 125 V dc,
IC = 0.5 A dc
Electrical measurements
See subgroup 2 of this table
Subgroups 6 and 7
Not applicable
1/
For sampling plan, see MIL­PRF­19500.
9



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