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MIL-PRF-19500-421 Semiconductor Device, Dual Transistor, Unitized, Npn/Pnp, Complementary, Silicon, Types 2N3838, 2N4854, And 2N4854U, Jan, Jantx, And JantxvThis specification covers the performance requirements for unitized, dual transistors which contain a pair of electrically isolated complementary NPN and PNP silicon triode transistors in one package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/421G

* TABLE I. Group A inspection.

MIL-STD-750

Symbol

Limit

Unit

Inspection 1/

Method

Conditions

Min

Max

Subgroup 1 2/

n = 45 devices, c = 0

Visual and mechanical

2071

examination 3/

n = 15 leads, c = 0

Solderability 3/

2026

n = 15 devices, c = 0

Resistance to solvents

1022

3/ 4/

Test condition C, 25 cycles

Temp cycling 3/

1051

n = 22 devices, c = 0

Heremetic seal

1071

Fine leak

Gross leak

Table I, subgroup 2

Electrical measurements

2037

Precondition TA = +250�C at t = 2 hrs, n

Bond strength 3/

= 11 wires, c = 0

Subgroup 2

�C/W

Thermal impedance

3131

See 4.3.3

ZθJX

�A dc

Bias condition D; VCB = 60 V dc

3036

Collector to base

ICBO1

cutoff current

Bias condition D; IC = 10 mA dc;

Breakdown voltage,

V dc

3011

V(BR)CEO

pulsed (see 4.5.1)

collector to emitter

�A dc

Bias condition D; VEB = 5 V dc

3061

Emitter to base cutoff

IEBO1

current

Bias condition D; VCB = 50 V dc

3036

Collector to base

ICBO2

cutoff current

2N3838

nA dc

2N4854

nA dc

2N4854U

nA dc

3061

Emitter to base cutoff

Bias condition D; VEB = 3 V dc

IEBO2

current

VCE = 1 V dc; IC = 150 mA dc;

3076

Forward-current

hFE1

pulsed (see 4.5.1)

transfer ratio

VCE = 10 V dc; IC = 100 �A dc

3076

Forward-current

hFE2

transfer ratio

VCE = 10 V dc; IC = 1.0 mA dc

3076

Forward-current

hFE3

transfer ratio

See footnotes at end of table.