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MIL-PRF-19500-421 Semiconductor Device, Dual Transistor, Unitized, Npn/Pnp, Complementary, Silicon, Types 2N3838, 2N4854, And 2N4854U, Jan, Jantx, And JantxvThis specification covers the performance requirements for unitized, dual transistors which contain a pair of electrically isolated complementary NPN and PNP silicon triode transistors in one package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/421G
* TABLE I. Group A inspection - Continued.
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 4 - Continued.
VCE = 10 V dc; IC = 100 µA dc;
NF
8
dB
3246
Noise figure
f = 1 kHz; RG = 1 kΩ
See figure 4
45
ns
Turn-on time
ton
See figure 5
300
ns
Turn-off time
toff
See figure 6
ton + toff
18
ns
Pulse response
See figure 7
40
V dc
Collector emitter
VCE
nonlatching voltage
Subgroups 5, 6, and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup 1, double the sample size of the failed test or sequence of tests. A failure in
table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for laser marked devices.
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