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MIL-PRF-19500-421 Semiconductor Device, Dual Transistor, Unitized, Npn/Pnp, Complementary, Silicon, Types 2N3838, 2N4854, And 2N4854U, Jan, Jantx, And JantxvThis specification covers the performance requirements for unitized, dual transistors which contain a pair of electrically isolated complementary NPN and PNP silicon triode transistors in one package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/421G
NOTES:
1.  The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent, and the generator
source impedance shall be 50 Ω.
2.  Sampling oscilloscope: ZIN ≥ 100 kΩ, CIN ≤ 12 pF, rise time ≤ 0.2 ns.
3.  The signs, polarity symbols, and waveforms shown are for the NPN transistor; the signs and
polarity symbols are reversed for the PNP triode (see 1.2 herein).
FIGURE 6. Nonsaturated switching time test circuit.
NOTE: The input waveform has the following characteristics: PW ≤ 10 µs, duty cycle ≤ 2 percent.
FIGURE 7. Collector emitter nonlatching voltage test circuit.
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