An Integrated Publishing, Inc. Site

An Integrated Publishing Website

MIL-PRF-19500-421 Semiconductor Device, Dual Transistor, Unitized, Npn/Pnp, Complementary, Silicon, Types 2N3838, 2N4854, And 2N4854U, Jan, Jantx, And JantxvThis specification covers the performance requirements for unitized, dual transistors which contain a pair of electrically isolated complementary NPN and PNP silicon triode transistors in one package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/421G

* TABLE II. Group E inspection (all quality levels) - for qualification and re-qualification only.

MIL-STD-750

Qualification

Inspection

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

Test condition C, 500 cycles

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 herein.

45 devices

Subgroup 2

c=0

Intermittent life

1037

VCB = 10 V dc, 6,000 cycles.

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 3

3 devices

c=0

Destructive physical analysis

2102

(DPA)

Subgroup 4

Sample size

Thermal impedance, thermal

3131

Each supplier shall submit their (typical) maximum

N/A

resistance curves

design thermal impedance curves. In addition, the

optimal test conditions and ZθJX limit shall be provided

to the qualifying activity in the qualification report.

Subgroup 5

Not applicable

Subgroup 6

3 devices

c=0

ESD

1020

Subgroup 8

45 devices

c=0

Condition A for devices ≥ 400 V

Reverse stability

1033

Condition B for devices < 400 V