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MIL-PRF-19500-421 Semiconductor Device, Dual Transistor, Unitized, Npn/Pnp, Complementary, Silicon, Types 2N3838, 2N4854, And 2N4854U, Jan, Jantx, And JantxvThis specification covers the performance requirements for unitized, dual transistors which contain a pair of electrically isolated complementary NPN and PNP silicon triode transistors in one package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/421G
* TABLE I. Group A inspection - Continued.
MIL-STD-750
Symbol
Limit
Unit
Inspection 1/
Method
Conditions
Min
Max
Subgroup 2 - Continued.
VCE = 10 V dc; IC = 10 mA dc;
3076
75
Forward-current
hFE4
pulsed (see 4.5.1)
transfer ratio
Forward-current
100
300
3076
VCE = 10 V dc; IC = 150 mA dc
hFE5
transfer ratio
pulsed (see 4.5.1)
VCE = 10 V dc; IC = 300 mA dc;
hFE6
Forward-current
3076
35
pulsed (see 4.5.1)
transfer ratio
Test condition A; IB = 15 mA dc;
VBE(sat)
Base emitter
3066
0.80
1.25
V dc
IC = 150 mA dc; pulsed (see 4.5.1)
saturation voltage
IB = 15 mA dc; IC = 150 mA dc;
Collector to emitter
3071
0.40
V dc
VCE(sat)
pulsed (see 4.5.1)
saturation voltage
Subgroup 3
TA = +150°C
High temperature
operation:
µA dc
Bias condition D; VCB = 50 V dc
10
3036
* Collector to base
ICBO3
cutoff current
TA = -55°C
Low temperature
3076
operation:
VCE = 10 V dc; IC = 10 mA dc
12
3076
Forward-current
hFE7
transfer ratio
Subgroup 4
VCE = 10 V dc; IC = 1 mA dc;
Small-signal short-
60
300
3206
hfe
f = 1 kHz
circuit forward
current transfer ratio
kΩ
VCE = 10 V dc; IC = 1 mA dc;
Small-signal common
1.5
9
3201
hie
f = 1 kHz
emitter input
impedance
µhmo
VCE = 10 V dc; IC = 1 mA dc;
50
Small-signal common
3216
hoe
f = 1 kHz
emitter output
admittance
hfe
VCE = 10 V dc; IC = 20 mA dc;
Magnitude of small-
2
10
3306
f = 100 MHz
signal short-circuit
forward current
transfer ratio
VCB = 10 V dc; IE = 0;
Open circuit output
8
pF
3236
Cobo
100 kHz ≤ f ≤ 1 MHz
capacitance
See footnotes at end of table.
11



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