The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
MIL-PRF-19500/453F
completed by 31 April 2011.
31 January 2011
SUPERSEDING
MIL-PRF-19500/453E
24 April 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY
TYPE 2N5109 AND 2N5109UB, JAN, JANTX, JANTXV, JANS, JANHC, JANKC
JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, AND JANSH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, VHF-UHF amplifier
transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two
levels of product assurance are provided for die. Provisions for radiation hardness assurance (RHA) to eight
radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L",
"R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
1.2 Physical dimensions. See figure 1 herein (similar to TO-39), figure 2 (2N5109UB) and figure 3
(JANHC2N5109, JANKC2N5109).
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
RθJA
RθJC
TSTG and
PT (1)
PT (2)
VCBO
VCEO
IC
VEBO
TA = +25°C
TC = +25°C
TJ
°C
°C/W
°C/W
W
W
V dc
V dc
A dc
V dc
1
2.9
40
20
0.4
3.0
-65 to +200
175
60
(1) Derate at 5.71 mW/°C above TA > +25°C.
(2) Derate at 16.6 mW/°C above TC > +25°C.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.daps.dla.mil .
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