MIL-PRF-19500-453 Semiconductor Device, Transistor, Npn, Silicon, High-Frequency Type 2N5109 And 2N5109Ub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc Jasm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for NPN silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/453F

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

cm............... Cross modulation

G................. Voltage gain.

NF............... Noise figure

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500, and figure 1 (similar to TO-39), figure 2 (2N5109UB) and figure 3 (JANHC2N5109 and

JANKC2N5109) herein.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

* 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and

test levels shall be as defined in MIL-PRF-19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.

* 3. 8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L,

R, F, G, or H shall immediately precede (or replace) the device "2N" identifier (depending upon degree of

abbreviation required).

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and table I, II, and III).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with

MIL-PRF-19500.

4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.