MIL-PRF-19500-453 Semiconductor Device, Transistor, Npn, Silicon, High-Frequency Type 2N5109 And 2N5109Ub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc Jasm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for NPN silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/453F

4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table E-IV

Measurement

of MIL-PRF-19500)

JANS levels

JANTX and JANTXV levels

(1) 3c

Thermal impedance (see 4.3.2)

Not applicable

ICEO1 and hFE1

48 hours minimum

ICEO1 and hFE1;

ICEO1 and hFE1

ĆICEO1= 100 percent of initial value or 2 uA dc,

whichever is greater.

ĆhFE1 = � 20 percent.

See 4.3.1

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICEO1 = 100 percent of initial value or

2 �A dc, whichever is greater.

ĆhFE1 = 20 percent change from initial reading.

(1)

Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in

screening requirements.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc; TA = room ambient

as defined in the general requirements of 4.5 of MIL-STD-750. Power shall be applied to the device to achieve a

junction temperature, TJ = +135�C minimum and a minimum PD = 75 percent of PT maximum rated as defined in 1.3

herein. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions,

TJ, and mounting conditions) may be used for JAN, JANTX, and JANTXV. A justification demonstrating equivalence

is required. In addition, the manufacturing site's burn-in data and performance history will be essential criteria for

burn-in modification approval.

* 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).

Measurement delay time (tMD) = 70 �s max. See table III, group E, subgroup 4 herein.

4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample

of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb,

group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with

4.4.2).