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MIL-PRF-19500-453 Semiconductor Device, Transistor, Npn, Silicon, High-Frequency Type 2N5109 And 2N5109Ub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc Jasm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for NPN silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/453F
* TABLE II. Group D inspection and end-point limits.
Symbol
Unit
Inspection 1/ 2/ 3/
MIL-STD-750
Limits
Method
Conditions
Min
Max
Subgroup 1 4/
Neutron irradiation
1017
Neutron exposure Vces = 0 V
Breakdown voltage,
3001
Bias condition D; IC = 100 ľA dc
V(BR)CBO
40
V dc
collector to base
Breakdown voltage,
3011
Bias condition D; IC = 5 mA dc
V(BR)CEO
20
V dc
collector to emitter
Breakdown voltage,
3026
Bias condition D; IC = 100 ľA dc
V(BR)EBO
3.0
V dc
emitter to base
Bias condition D; IC = 5 mA dc; R2 = 10 Ω
Breakdown voltage,
3011
V(BR)CER
40
V dc
collector to emitter
Collector to emitter
3041
Bias condition D; VCE = 15 V dc
ICEO1
40
ľA dc
cutoff current
Forward-current
3076
VCE = 15 V dc, IC = 50 mA dc;
[hFE1]
5/ [20]
150
transfer ratio
pulsed (see 4.5.1)
Collector to emitter
3071
IC = 100 mA dc; IB = 10 mA dc;
VCE(sat)1
0.58
V dc
saturated voltage
pulsed (see 4.5.1)
Subgroup 2
Steady-state total dose
1019
Gamma exposure VCES = 16 V
irradiation
Breakdown voltage,
3001
Bias condition D; IC = 100 ľA dc
V(BR)CBO
40
V dc
collector to base
Breakdown voltage,
3011
Bias condition D; IC = 5 mA dc
V(BR)CEO
20
V dc
collector to emitter
Breakdown voltage,
3026
Bias condition D; IC = 100 ľA dc
V(BR)EBO
3.0
V dc
emitter to base
Bias condition D; IC = 5 mA dc; R2 = 10 Ω
Breakdown voltage,
3011
V(BR)CER
40
V dc
collector to emitter
Collector to emitter
3041
Bias condition D; VCE = 15 V dc
ICEO1
40
ľA dc
cutoff current
Forward-current
3076
VCE = 15 V dc, IC = 50 mA dc;
[hFE1]
5/ [20]
150
transfer ratio
pulsed (see 4.5.1)
Collector to emitter
3071
IC = 100 mA dc; IB = 10 mA dc;
VCE(sat)1
0.58
V dc
saturated voltage
pulsed (see 4.5.1)
1/
Tests to be performed on all devices receiving radiation exposure.
2/
For sampling plan, see MIL-PRF-19500.
3/
Electrical characteristics apply to all device types unless otherwise noted.
4/
See 6.2.e herein.
5/
See method 1019 of MIL-STD-750, for how to determine [hFE] by first calculating the delta (1/hFE) from the pre and
post-radiation hFE. Notice that [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can
never exceed the pre-radiation minimum hFE that it is based upon.
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