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MIL-PRF-19500-455 Semiconductor Device, Transistor, Npn, Silicon, Power Switching, Types 2N5664, 2N5665, 2N5666, 2N5666S, 2N5666U3, 2N5667, And 2N5667S, Jan, Jantx, Jantxv, Jantxvr, Jantxvf, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, And Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. Radiation hardness assurance \(RHA\) level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/455K
TABLE IV. Group E inspection (all quality levels) - for qualification only.
Inspection
Sample plan
Method
Conditions
Subgroup 1
45 devices
c=0
Temperature cycling
1051
Test condition C, 500 cycles.
(air to air)
Hermetic seal
1071
Fine leak
Gross leak
Electrical measurements
See table I, subgroup 2 and table II, step 1 and 2.
Subgroup 2
45 devices
c=0
Intermittent life
1037
VCB = 10 V dc, 6,000 cycles.
Electrical measurements
See table I, subgroup 2 and table II, step 1 and 2 herein.
Subgroup 4
Sample size
N/A
Thermal impedance
curves
Subgroup 5
3 devices,
c=0
Barometric pressure
1001
Normal mounting pressure = 8 mm Hg ±2 mm Hg for 60 s
(reduced)
(minimum) Unless otherwise specified, the device shall
be subjected to the maximum voltage it would be
subjected to under rated operating conditions.
Subgroup 8
45 devices
c=0
Condition A for devices ≥ 400 V,
Reverse stability
1033
Condition B for devices < 400 V.
21



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