INCH-POUND
The documentation and process conversion measures
necessary to comply with this document shall be
MIL-PRF-19500/456E
completed by 6 June 2009.
6 March 2009
SUPERSEDING
MIL-PRF-19500/456D
29 July 1999
*
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,
TYPES 2N5302 AND 2N5303, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, high-power transistors.
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-3).
1.3 Maximum ratings. Unless otherwise specified, TA = +25C.
*
Type
IC
VCBO
IB
VEBO
VCEO
PT (1)
PT (1)
TJ and TSTG
RJC
TC = +100C
TA = +25C
C/W Max
C
W
W
V dc
V dc
V dc
A dc
A dc
2N5302
5
115
60
60
5.0
7.5
30
0.875
-65 to +200
2N5303
5
115
80
80
5.0
7.5
20
0.875
-65 to +200
(1) Derate linearly, 1.14 mW/C above TC = +100C.
Derate linearly, 28.57 mW/C above TA = +25C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at https://assist.daps.dla.mil .
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