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MIL-PRF-19500-456 Semiconductor Device, Transistor, Npn, Silicon, High-Power Type 2N5302 And 2N5303, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, high-power transistors. Four level of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/456E
NOTES:
1. The rise time (tr) of the applied pulse shall be 2 ns; duty cycle 2 percent; generator source impedance shall be
50 .
2. Output sampling oscilloscope: ZIN 100 k; CIN 12 pF; rise time 0.2 ns.
FIGURE 2. Pulse response test circuit.
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