MIL-PRF-19500-456 Semiconductor Device, Transistor, Npn, Silicon, High-Power Type 2N5302 And 2N5303, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, high-power transistors. Four level of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/456E

* TABLE I. Group A inspection - Continued.

Unit

Symbol

Inspection 1/

MIL-STD-750

Limits

Min

Max

Method

Conditions

Subgroup 5 - Continued

Test 2

2N5302, 2N5303

VCE = 20 V dc; IC = 10 A dc

Test 3

2N5302, 2N5303

VCE = 40 V dc; IC = 3 A dc

Test 4

2N5302

VCE = 50 V dc; IC = 600 mA dc

2N5303

VCE = 60 V dc; IC = 600 mA dc

TA = 25C;

Safe operating area

(clamped switching)

VCE = 15 V dc;

(see figures 5 and 6)

2N5302

Clamp voltage = 60 V dc;

IC = 30 A dc

2N5303

Clamp voltage = 80 V dc;

IC = 20 A dc

Electrical measurements

See table I, group A, subgroup 2

Subgroups 6 and 7

Not applicable

1/ For sampling plan see MIL-PRF-19500.

* 2/ This test required for the following end-points measurements only:

Group B, subgroups 2 and 3 (JAN, JANTX, AND JANTXV).

Group C, subgroups 2 and 6.

Group E, subgroup 1.