MIL-PRF-19500-456 Semiconductor Device, Transistor, Npn, Silicon, High-Power Type 2N5302 And 2N5303, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, high-power transistors. Four level of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/456E

* TABLE II. Group E inspection (all quality levels) - for qualification or re-qualification only.

Inspection

MIL-STD-750

Sample

plan

Method

Conditions

45 devices

Subgroup 1

c=0

1051

Test condition C, 500 cycles.

Temperature cycling

Hermetic seal

1071

Test conditions G or H.

Fine leak

Test conditions C or D.

Gross leak

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 2

45 devices

c=0

Test temperature = +125C; VCB = 30 V dc;

Blocking life

1048

T = 1,000 hours.

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 4

See table E-IX of MIL-PRF-19500, group E, subgroup 4.

Thermal impedance curves

3 devices

Subgroup 6

1020

ESD

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.