For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-456 Semiconductor Device, Transistor, Npn, Silicon, High-Power Type 2N5302 And 2N5303, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, high-power transistors. Four level of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15


MIL-PRF-19500/456E
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method
3131 of MIL-STD-750. The following details shall apply:
a. Collector current magnitude during power application shall be 3.14 A dc.
b. Collector to emitter voltage magnitude shall be 20 V dc.
c. Reference temperature measuring point shall be the case.
d. Reference point temperature shall be +25C TR +75C and recorded before the test is started.
e. Mounting arrangement shall be with heat sink to header.
f. Maximum limit of RJC shall be 0.875C/W.
7



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.