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MIL-PRF-19500-456 Semiconductor Device, Transistor, Npn, Silicon, High-Power Type 2N5302 And 2N5303, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, high-power transistors. Four level of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/456E
* TABLE I. Group A inspection.
Unit
Symbol
Inspection 1/
MIL-STD-750
Limits
Min
Max
Method
Conditions
Subgroup 1
2071
Visual and mechanical
examination
Subgroup 2
°C/W
Thermal impedance 2/
3131
See 4.3.2
ZJX
3011
Collector - emitter
Bias condition D; IC = 200 mA dc
V(BR)CEO
breakdown voltage
pulsed (see. 4.5.1)
V dc
60
2N5302
V dc
80
2N5303
A dc
3041
Bias condition D;
10.0
Collector - emitter
ICEO
cutoff current
2N5302
VCE = 60 V dc
2N5303
VCE = 80 V dc
A dc
5.0
3061
Emitter - base
Bias condition D; VEB = 5 V dc
IEBO
cutoff current
A dc
3041
Collector - emitter
5.0
Bias condition A; VBE = 1.5 V dc;
ICEX1
cutoff current
2N5302
VCE = 60 V dc
2N5303
VCE = 80 V dc
A dc
3036
Bias condition D;
5.0
Collector - base
ICBO
cutoff current
2N5302
VCE = 60 V dc
2N5303
VCE = 80 V dc
1.7
V dc
3066
Base - emitter
Test condition A; IC = 10 A dc;
VBE(sat)1
saturated voltage
IB = 1 A dc; pulsed (see 4.5.1)
3066
Base - emitter
Test condition A; IC = 15 A dc;
VBE(sat)2
saturated voltage
IB = 1.5 A dc; pulsed (see 4.5.1)
V dc
2N5302
1.8
V dc
2N5303
2.0
3066
Base - emitter
Test condition A; IC = 20 A dc;
VBE(sat)3
saturated voltage
pulsed (see 4.5.1);
V dc
2.5
2N5302
IB = 2 A dc
V dc
2.5
2N5303
IB = 4 A dc
See footnotes at end of table.
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