MIL-PRF-19500-461 Semiconductor Device, Transistor, Pnp, Silicon, High-Power Type 2N6211, 2N6212, 2N6213, 2N6213A, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for PNP silicon, high-voltage. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/461F

* TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only.

Inspection

MIL-STD-750

Sample

plan

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

Test condition C, 500 cycles.

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2.

Subgroup 2

45 devices

c=0

Intermittent life

1037

Intermittent operation life: VCB = 10 V dc, 6,000

cycles

Electrical measurements

See table I, subgroup 2.

Subgroup 4

Sample size

N/A

Thermal impedance curves

See MIL-PRF-19500.

Subgroup 5

3 devices

c=0

Test condition C.

Barometric pressure

1001

2N6211

VCE = 250 V dc

2N6212

VCE = 315 V dc

2N6213

VCE = 360 V dc

2N6213A

VCE = 400 V dc

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B