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MIL-PRF-19500-461 Semiconductor Device, Transistor, Pnp, Silicon, High-Power Type 2N6211, 2N6212, 2N6213, 2N6213A, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for PNP silicon, high-voltage. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/461F

* TABLE I. Group A inspection.

Inspection

MIL-STD-750

Limit

Unit

Symbol

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

n = 45 devices, c = 0

examination

Subgroup 2

Thermal impedance 2/

3131

See 4.3.3

�C/W

ZθJX

Collector to emitter

3011

Bias condition D, IC = 200 mA dc,

V(BR)CEO

breakdown voltage

pulsed (see 4.5.1), (or L = 10 mH,

f = 30-60 Hz)

2N6211

225

V dc

2N6212

300

V dc

2N6213

350

V dc

2N6213A

450

V dc

Collector to emitter

3011

Bias condition D, IC = 200 mA dc,

V(BR)CER

breakdown voltage

pulsed (see 4.5.1), (or L = 10 mH,

f = 30-60 Hz) RBE = 50 Ω

2N6211

250

V dc

2N6212

325

V dc

2N6213

375

V dc

2N6213A

475

Collector to emitter

3011

Bias condition D, IC = 200 mA dc,

V(BR)CEX

breakdown voltage

pulsed (see 4.5.1), (or L = 10 mH,

f = 30-60 Hz) RBE = 50 Ω, VBE =

1.5 V dc

2N6211

275

V dc

2N6212

350

V dc

2N6213

400

V dc

2N6213A

500

V dc

3041

Collector to emitter

5.0

mA dc

Bias condition C; VCE = 150 V dc

ICEO

cutoff current

Collector to emitter

3041

0.5

mA dc

Bias condition C; VBE = 1.5 V dc

ICEX1

cutoff current

2N6211

VCE = 250 V dc

2N6212

VCE = 315 V dc

2N6213

VCE = 360 V dc

2N6213A

VCE = 400 V dc

See footnote at end of table.