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MIL-PRF-19500-461 Semiconductor Device, Transistor, Pnp, Silicon, High-Power Type 2N6211, 2N6212, 2N6213, 2N6213A, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for PNP silicon, high-voltage. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/461F
Dimensions
Ltr
Inches
Millimeters
Notes
Min
Max
Min
Max
A
.119
.125
3.02
3.18
B
.119
.125
3.02
3.18
NOTES:
1.  Dimensions are in inches.
*
2.  Millimeters are given for general information only.
3.  The physical characteristics of the die are:
Thickness: .006 inch (0.15 mm) to .012 inch (0.30 mm).
Top metal: Aluminum 50,000 Å nominal, 37,500 Å minimum.
Back metal: Gold 3,000 Å nominal.
Back side: Collector.
Bonding pad: B = .015 inch (0.38 mm) x .072 inch (1.83 mm).
E = .015 inch (0.38 mm) x .060 inch (1.52 mm).
4.  Junctions passivated with thermal silicon dioxide.
* FIGURE 2. JANHC and JANKC (A-version) die dimensions.
4



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