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MIL-PRF-19500-463 Semiconductor Device, Diode, Silicon, Current Regulator, Types 1N5283-1 Through 1N5314-1, And 1N5283Ur-1 Through 1N5314Ur-1, 1N7048-1 Through 1N7055 1, 1N7048Ur-1 Through 1N7055Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for 100 volt, silicon, current regulator diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/463K
4.3 Screening (JAN, JANTXV, JANTX, and JANS levels). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen
Measurement
(see table E-IV of
JANS
JANTX and JANTXV levels
JAN level (1)
3a
Temperature cycling
Temperature cycling
Temperature cycling (in
accordance with
MIL-PRF-19500, JANTX level)
(2) 3c
Thermal
Thermal impedance
Thermal impedance
impedance (see
(see 4.3.3)
(see 4.3.3)
9
Not applicable
Not applicable
IS1 (3)
10
VPOV = Col 11, table II
VPOV = Col 11, table II at
VPOV = Col 11, table II at
at TA = +25°C t = 48
TA = +25°C t = 48 hours
TA = +25°C t = 48 hours
hours
11
Subgroup 2 of table I
Subgroup 2 of table I
Subgroup 2 of table I herein
herein;
herein
ĆIS1 ≤ 5 percent of initial
value (4)
12
See 4.3.2
See 4.3.2
Not applicable
(5) 13
Subgroup 2 of table I
Subgroup 2 of table I
Not applicable
herein;
herein;
ĆIS1 ≤ 5 percent of initial
ĆIS1 ≤ 5 percent of initial
value. (4)
value. (4)
(1)
Screens 3a, 3c, 10, and 11 are the only screens required for JAN level product.
(2)
Shall be performed any time after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to
be repeated in screening requirements.
Symbol "IP1" may be used in place of "IS1".
(3)
Symbol "ĆIP1" may be used in place of "ĆIS1".
(4)
(5)
When thermal impedance is performed prior to screen 13, it is not required to be repeated in screen 13.
4.3.1 Screening (JANHC or JANKC). Screening of die shall be in accordance with appendix G of MIL-PRF-19500.
As a minimum, die shall be 100-percent probed to ensure compliance with table I, subgroup 2 (with the exception of
thermal impedance).
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: IR = 200 mA dc minimum; mounting and
test conditions in accordance with method 1038 of MIL-STD-750, test condition B, TEC = +75°C to +125°C for
surface mount devices. TA = room ambient as defined in the general requirements of 4.5 of MIL-STD-750.
9



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