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MIL-PRF-19500-477 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, Types 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, And 1N5811, 1N5802Us, 1N5804Us, 1N5806Us, 1N5807Us, 1N5809Us, And 1N5811Us, 1N5802Urs, 1N5804Urs, 1N5806Urs, 1N5807Urs, 1N5809Urs, And 1N5811Urs, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/477K
TABLE I. Group A inspection.
Inspection
1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
Thermal impedance 2/
3101
See 4.3.1
ZθJX
°C/W
1N5802, US, URS,
1N5804, US, URS,
1N5806, US, URS
°C/W
1N5807, US, URS,
1N5809, US, URS,
1N5811, US, URS
Duty cycle ≤ 2 percent (pulsed
Forward voltage
4011
see 4.5.1); tp = 8.3 ms (max)
1N5802, US, URS,
0.875
V
IFM = 1.0 A
VFM1
1N5804, US, URS,
1N5806, US, URS
1N5802, US, URS,
0.975
V
IFM = 2.5 A
VFM2
1N5804, US, URS,
1N5806, US, URS
Duty cycle ≤ 2 percent (pulsed
Forward voltage
4011
see 4.5.1); tp = 8.3 ms (max)
1N5807, US, URS,
0.865
V
IFM = 3.0 A
VFM3
1N5809, US, URS,
1N5811, US, URS
1N5807, US, URS,
0.875
V
IFM = 4.0 A
VFM4
1N5809, US, URS,
1N5811, US, URS
1N5807, US, URS,
IFM = 6.0 A
0.925
V
VFM5
1N5809, US, URS,
1N5811, US, URS
See footnotes at end of table.
13



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