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MIL-PRF-19500-477 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, Types 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, And 1N5811, 1N5802Us, 1N5804Us, 1N5806Us, 1N5807Us, 1N5809Us, And 1N5811Us, 1N5802Urs, 1N5804Urs, 1N5806Urs, 1N5807Urs, 1N5809Urs, And 1N5811Urs, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/477K
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein. See table III herein for delta limits when applicable.
* 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500.
Subgroup
Method
Condition
Axial devices - Tension: Condition A, 12 pounds, t = 15s for 1N5802, 1N5804,
C2
2036
1N5806. Condition A, 20 pounds, t = 15s for - 1N5807, 1N5809, 1N5811.
Fatigue: Condition E for all types, 2 pounds. (Lead fatigue is not applicable to
US diodes).
C2
2036
US, URS devices ­ Tension: Condition A, 12 pounds, t = 15s for 1N5802US,
1N5804US, 1N5806US. Condition A, 20 pounds, t = 15s for 1N5807US,
1N5809US, 1N5811US. Suitable fixtures may be used to pull the end-caps in a
manner which does not aid construction. Reference to axial lead may be
interpreted as end-cap with fixtures used for mounting (see figure 5 herein).
(Lead fatigue is not applicable to US and URS diodes).
RθJL(maximum) see col. 8 of 1.3.2 and 4.3.1 herein. L = .375 inch (9.53 mm).
C5
4081
For surface mount devices (US version), RθJEC, see col. 9 of 1.3.2 and 4.3.1
herein.
IO = IO1 rated minimum (see col. 4 of 1.3.2); adjust IO to achieve TJ = 150° C
C6
1027
minimum, apply VR = rated VRWM (see col. 2 of 1.3.2), f = 50 - 60 Hz (see 4.5.3
and 4.5.3.1). TA = 55°C (max). For irradiated devices, include trr as an end-point
measurement.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements
(end-points) shall be in accordance with table I, subgroup 2 herein. See table III herein for delta limits when
applicable.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Scope display evaluation. Scope display evaluation shall be stable in accordance with method 4023 of
MIL-STD-750, condition A. Scope display may be performed on ATE (automatic test equipment) for screening only
with the approval of the qualifying activity. Scope display in table I, subgroup 4 shall be performed on a curve tracer.
The reverse current (IBR) over the knee shall be 500 ”A peak.
4.5.3 Burn-in and life tests. These tests shall be conducted with a half-sine waveform of the specified peak voltage
impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average
rectified current. The forward conduction angle of the rectified current shall be neither greater than 180 degrees, nor
less than 150 degrees.
4.5.3.1 Burn-in. The use of a current limiting or ballast resistor is permitted provided that each DUT still sees the
Io and that the minimum required voltage, where applicable, is maintained through-out the burn-in period. Use
method 3100 of MIL-STD-750 to measure TJ. TJ = 135°C minimum for screening and 150șC minimum for life tests.
TA = 55°C max
4.5.4 Thermal resistance. Thermal resistance measurement shall be performed in accordance with method 4081
of MIL-STD-750 using the guidelines in that method for determining IM, IH, and tH. Measurement delay time tMD =
70 ”s max. See table E-IX of MIL-PRF-19500, subgroup 4, and figures 6, 7, 8, and 9 herein. Forced moving air or
draft shall not be permitted across the devices during test.
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