MIL-PRF-19500-477 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, Types 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, And 1N5811, 1N5802Us, 1N5804Us, 1N5806Us, 1N5807Us, 1N5809Us, And 1N5811Us, 1N5802Urs, 1N5804Urs, 1N5806Urs, 1N5807Urs, 1N5809Urs, And 1N5811Urs, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/477K

4.3 Screening (JANS, JANTXV and JANTX levels only). Screening shall be in accordance with appendix E, table

E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with

table I herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see

JANS level

JANTXV and JANTX level

appendix E,

table E-IV of

MIL-PRF-19500)

(1) 3c

Thermal impedance (see 4.3.1)

Not required

IR1, VFM1 or VFM4.

Method 1038 of MIL-STD-750, condition A

Required

IR1, VFM1, or VFM4; ĆIR1 ≤ �100 percent of initial

IR1, VFM1, or VFM4

reading or �150 nA dc (1N5802, 1N5804,

1N5806) or �500 nA dc (1N5807, 1N5809,

1N5811), whichever is greater.

ĆVFM ≤ �0.05 V dc.

Required, see 4.3.2

(2) 13

Subgroups 2 and 3 of table I herein; ĆIR1 ≤ �100

Subgroup 2 of table I herein; ĆIR1 ≤ �100 percent of

percent of initial reading or �150 nA dc (1N5802,

initial reading or � 250 nA dc (1N5802, 1N5804,

1N5804, 1N5806) or �500 nA dc (1N5807,

1N5806) or �1 �A dc (1N5807, 1N5809, 1N5811),

1N5809, 1N5811), whichever is greater.

whichever is greater.

ĆVFM ≤ �0.05 V dc. Scope display evaluation

ĆVFM ≤ �0.05 V dc. Scope-display evaluation (see

(see 4.5.2)

4.5.2).

(1) Shall be performed anytime after temperature cycling, screen 3a; TX and TXV levels do not need to be repeated in

screening requirements.

(2) ZθJX is not required in screen 13, if already previously performed.

4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and K factor where appropriate.

Measurement delay time (tMD) shall be 70 �s maximum. The limits will be statistically derived. See table E-IX of

MIL-PRF-19500, group E, and table II, subgroup 4 herein.

4.3.2 Free air power burn-in conditions. Power burn-in conditions are as follows (see 4.5.3 and 4.5.3.1): IO(min) =

IO1. TA = 55�C maximum. Test conditions shall be in accordance with method 1038 of MIL-STD-750, condition B.

Adjust IO or TA to achieve the required TJ. TJ = 135�C minimum. With approval of the qualifying activity and

preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, mounting conditions) may be used for JANTX

and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing

site's burn-in data and performance history will be essential criteria for burn-in modification approval.

4.3.3 Screening (JANHC and JANKC). Screening of die shall be in accordance with appendix G of

MIL-PRF-19500. As a minimum, die shall be 100-percent probed to ensure compliance with table I, subgroup 2.

Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements.