MIL-PRF-19500-477 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, Types 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, And 1N5811, 1N5802Us, 1N5804Us, 1N5806Us, 1N5807Us, 1N5809Us, And 1N5811Us, 1N5802Urs, 1N5804Urs, 1N5806Urs, 1N5807Urs, 1N5809Urs, And 1N5811Urs, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/477K

3.4.2 Lead finish. Unless otherwise specified, lead or end-cap finish shall be solderable in accordance with

MIL-PRF-19500, MIL-STD-750, and herein. When solder alloy is used for finish, the maximum lead temperature is

limited to 175�C maximum. Where a choice of finish is desired, it shall be specified in the acquisition document (see

3.5 Marking. Devices shall be marked as specified in MIL-PRF-19500.

3.5.1 Marking of US and URS versions. For US versions only, all marking may be omitted from the device except

for the cathode marking. For URS versions only, all marking may be omitted from the device. All marking which is

omitted from the body of the devices shall appear on the label of the initial container.

3.5.2 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. Alternately,

for surface mount (US) devices, a minimum of three evenly spaced contrasting color dots around the periphery of the

cathode end may be used. No color coding will be permitted. For URS surface mount parts only, cathode shall be

connected to the round end-cap.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I, II, and III).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E inspection. Group E inspection shall be performed for qualification or requalification only. In case

qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II

tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first

inspection lot to this revision to maintain qualification.

4.2.2 JANHC and JANKC die. Qualification shall be in accordance with appendix G of MIL-PRF-19500 and as

specified herein.